? 2002 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3ma 500 v v gs(th) v ds = v gs , i d = 8ma 2.5 4.5 v i gss v gs = 20v, v gs = 0v 100 na i dss v ds = v dss t j = 25 c 400 a v gs = 0 v t j = 125 c 2 ma r ds(on) v gs = 10v, i d = i t 55n50 80 m ? note 2 50n50 100 m ? hiperfet tm power mosfet single die mosfet symbol test conditions maximum ratings v dss t j = 25c to 150c 500 v v dgr t j = 25c to 150c, r gs = 1m ? 500 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 55n50 47 a 50n50 53 a i dm t c = 25 c; note 1 55n50 200 a 50n50 220 a i ar t c = 25 c 55 a e ar t c = 25 c 60 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 500 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.5/13 nm/lb.in. weight 19 g v dss i d25 r ds(on) ixfe 55n50 500 v 52 a 80 m ? ? ? ? ? ixfe 50n50 500 v 47 a 100 m ? ? ? ? ? t rr 250 ns preliminary data sheet g = gate d = drain s = source either source terminal at minibloc can be used as main or kelvin source isoplus 227 tm (ixfe) 98904 (2/02) features ? low cost direct-copper bonded aluminium package ? encapsulating epoxy meets ul 94 v-0, flammability classification ? 2500v isolation ? low drain to case capacitance ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier ? conforms to sot-227b outline applications ? dc-dc converters ? battery chargers ? switched-mode and resonant-mode power supplies ? dc choppers ? temperature and lighting controls advantages ? easy to mount ? space savings ? high power density s g s d
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = i t , note 2 45 s c iss 9400 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1200 pf c rss 460 pf t d(on) 45 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 60 ns t d(off) r g = 1 ? (external), 120 n s t f 45 ns q g(on) 330 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 55 nc q gd 185 nc r thjc 0.25 k/w r thck 0.07 k/w source-drain diode (t j = 25 c, unless otherwise specified) characteristic values symbol test conditions min. typ. max. i s v gs = 0 55n50 55 a 50n50 50 a i sm repetitive; 55n50 220 a pulse width limited by t jm 50n50 200 a v sd i f = i s , v gs = 0 v, 1.3 v pulse test, t 300 s, duty cycle d 2 % t rr i f = i s , -di/dt = 100 a/ s, v r = 100 v t j = 25 c 180 n s t j = 25 c 30 ns q rm t j = 25 c 2 c i rm 8 a ixfe 55n50 ixfe 50n50 isoplus-227 b please see ixfn55n50 data sheet for characteristic curves. notes: 1. pulse width limited by t jm. 2. pulse test, t 300 ms, duty cycle d 2%. 3. i t test current: ixfe55n50: i t = 27.5 a IXFE50N50: i t = 25 a
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